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ON Semiconductor ) NPN PNP
Complementary Power Darlingtons
For Isolated Package Applications
Designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
MJF122 MJF127
COMPLEMENTARY SILICON POWER DARLINGTONS 5 AMPERES 100 VOLTS 30 WATTS
* * * * * * *
Electrically Similar to the Popular TIP122 and TIP127 100 VCEO(sus) 5 A Rated Collector Current No Isolating Washers Required Reduced System Cost High DC Current Gain -- 2000 (Min) @ IC = 3 Adc UL Recognized, File #E69369, to 3500 VRMS Isolation
III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I II II I I I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II II II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB Value 100 100 5 Unit Vdc Vdc Vdc 1 2 3 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
CASE 221D-02 TO-220 TYPE
RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C)
Test No. 1 Per Fig. 14 Test No. 2 Per Fig. 15 Test No. 3 Per Fig. 16
VISOL
4500 3500 1500 5 8
VRM S Adc Adc
Collector Current -- Continuous Peak Base Current
IC IB
0.12
Total Power Dissipation* @ TC = 25_C Derate above 25_C
PD
30 0.24
Watt s W/_ C Watt s W/_ C IC
Total Power Dissipation @ TA = 25_C Derate above 25_C
PD
2 0.016
Operating and Storage Junction Temperature Range
TJ, Tstg
-65 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol RJA
Max
Unit
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case*
62.5 4.1
_C/W _C/W
RJC
Lead Temperature for Soldering Purpose TL 260 _C *Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (1) Proper strike and creepage distance must be provided.
(c) Semiconductor Components Industries, LLC, 2002
1
April, 2002 - Rev. 3
Publication Order Number: MJF122/D
MJF122 MJF127
V2 APPROX. +8 V 0 V1 APPROX. -12 V tr, tf 10 ns DUTY CYCLE = 1% 51
RB D1 +4 V 8k 120
t, TIME ( s)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) VCEO(sus) ICEO ICBO IEBO 100 -- -- -- -- Vdc 10 10 2 Adc Adc Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc) DC Current Gain (IC = 3 Adc, VCE = 3 Vdc) hFE 1000 2000 -- -- -- -- -- -- Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc) Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc) Base-Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc) VCE(sat) VBE(on) 2 3.5 2.5 Vdc Vdc DYNAMIC CHARACTERISTICS Small-Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) hfe 4 -- -- MJF127 MJF122 Cob -- -- 300 200 pF (1) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2%. 5
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g., 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA VCC -30 V RC TUT SCOPE
3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1
ts
tf
25 s
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2
tr PNP NPN
td @ VBE(off) = 0 V
3 0.5 0.7 1 2 0.3 IC, COLLECTOR CURRENT (AMP)
5
7
10
Figure 1. Switching Times Test Circuit
Figure 2. Typical Switching Times
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MJF122 MJF127
TA TC 4 80 PD, POWER DISSIPATION (WATTS)
3 60 TC 2 40
1 20
TA
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (C)
Figure 3. Maximum Power Derating
1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.3 0.2 0.1 SINGLE PULSE RJC(t) = r(t) RJC TJ(pk) - TC = P(pk) RJC(t)
0.05
0.03 0.02
0.01 0.1
0.2 0.3
0.5
1
2
3
5
10
20 30 50 t, TIME (ms)
100
200 300
500
1K
2K 3K
5K
10K
Figure 4. Thermal Response
10 IC, COLLECTOR CURRENT (AMPS) 5 3 2 1 0.5 0.3 0.2 0.1 1 CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) 2 3 5 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 TJ = 150C d c 5 ms 1 ms 100 s
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
Figure 5. Maximum Forward Bias Safe Operating Area
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MJF122 MJF127
10,000 hfe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1 2 PNP NPN 5 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TC = 25C VCE = 4 Vdc IC = 3 Adc 300 200 C, CAPACITANCE (pF) Cob 100 70 50 30 0.1 Cib TJ = 25C
PNP NPN 0.2 2 10 20 0.5 1 5 VR, REVERSE VOLTAGE (VOLTS) 50 100
Figure 6. Typical Small-Signal Current Gain
Figure 7. Typical Capacitance
NPN MJF122
20,000 10,000 hFE , DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 25C -55C TJ = 150C VCE = 4 V 20,000 10,000 hFE , DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500
PNP MJF127
VCE = 4 V
TJ = 150C 25C
-55C
0.1
0.2
0.3
0.5 0.7
1
2
3
5
7
10
300 200 0.1
0.2
0.3
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 8. Typical DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3 TJ = 25C 2.6 IC = 2 A 2.2 1.8 1.4 1 0.3 4A 6A
3 TJ = 25C 2.6 IC = 2 A 2.2 1.8 1.4 1 4A 6A
0.5 0.7
1
2
3
5
7
10
20
30
0.3
0.5 0.7
1
2
3
5
7
10
20
30
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 9. Typical Collector Saturation Region
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MJF122 MJF127
NPN MJF122
3 TJ = 25C 2.5 V, VOLTAGE (VOLTS) 2 1.5 1 0.5 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1 2 3 5 7 10 V, VOLTAGE (VOLTS) 2.5 2 1.5 1 0.5 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) 3 TJ = 25C
PNP MJF127
IC, COLLECTOR CURRENT (AMP)
Figure 10. Typical "On" Voltages
+4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1
*IC/IB hFE 3 25C to 150C - 55C to 25C
V, TEMPERATURE COEFFICIENTS (mV/C)
+5 V, TEMPERATURE COEFFICIENT (mVC)
+5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 *VC FOR VCE(sat) - 55C to 25C VB FOR VBE - 55C to 25C 25C to 150C 5 7 10 *IC/IB hFE 3 25C to 150C
*VC FOR VCE(sat) 25C to 150C VB FOR VBE 0.2 0.3 0.5 - 55C to 25C 0.7 1 2 3 5 7 10
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1 23 IC, COLLECTOR CURRENT (AMP)
Figure 11. Typical Temperature Coefficients
105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 101 100 100C REVERSE FORWARD VCE = 30 V
105 104 103 102 101 100 10-1 TJ = 150C 100C 25C +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) REVERSE FORWARD VCE = 30 V
TJ = 150C
25C 10-1 -0.6 - 0.4 -0.2
0
+0.2
+0.4 +0.6 +0.8
+1
+1.2 +1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Typical Collector Cut-Off Region
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MJF122 MJF127
NPN MJF122
COLLECTOR
PNP MJF127
COLLECTOR
BASE
BASE
8k
120
8k
120
EMITTER
EMITTER
Figure 13. Darlington Schematic
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MJF122 MJF127
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED FULLY ISOLATED PACKAGE LEADS HEATSINK 0.110" MIN MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE
CLIP
CLIP
0.107" MIN LEADS
0.107" MIN LEADS
HEATSINK
HEATSINK
Figure 14. Clip Mounting Position for Isolation Test Number 1
Figure 15. Clip Mounting Position for Isolation Test Number 2
Figure 16. Screw Mounting Position for Isolation Test Number 3
*Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4-40 SCREW PLAIN WASHER CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 17. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040.
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MJF122 MJF127
PACKAGE DIMENSIONS
CASE 221D-02 TO-220 TYPE ISSUE D
-T- F Q A
123
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78
-B-
C S U
H K -Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MJF122/D

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